IPI320N20N3 G datasheet

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О ДАТАШИТЕ

• Маркировка
  IPI320N20N3 G
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPI320N20N3 G Configuration: Single Continuous Drain Current: 34 A Drain-source Breakdown Voltage: 200 V Fall Time: 4 nS Gate Charge Qg: 22 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-262-3 Part # Aliases: IPI320N20N3GAKSA1 IPI320N20N3GXK SP000714312 Power Dissipation: 136 W Resistance Drain-source Rds (on): 32 mOhms at 10 V Rise Time: 9 nS Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 21 nS RoHS: yes Drain-Source Breakdown Voltage: 200 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 32 mOhms at 10 V Typical Turn-Off Delay Time: 21 nS
• Количество страниц
  10 шт.
• Форматы файла
  HTML, PDF

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